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1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 IRGP6660DPBF irgp6660d-epbf base part number package type standard pack orderable part number form quantity IRGP6660DPBF to-247ac tube 25 IRGP6660DPBF irgp6660d-epbf to-247ad t ube 25 irgp6660d-epbf absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 95 i c @ t c = 100c continuous collector current 60 i cm pulse collector current, v ge = 15v 144 i lm clamped inductive load current, v ge = 20v ? 192 i frm @ t c = 100c diode repetitive peak forward current ?? 30 i fm diode maximum forward current ? 192 v ge continuous gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 330 w p d @ t c = 100c maximum power dissipation 167 t j operating junction and -40 to +175 c t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) a thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ? ??? ??? 0.45 c/w r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? ??? 40 r jc (diode) thermal resistance junction-to-case-(each diode) ? ??? ??? 3.35 v ces = 600v i c = 60a, t c =100c t sc 5s, t j(max) = 175c v ce(on) typ. = 1.7v @ i c = 48a applications ? welding ? h bridge converters features benefits low v ce(on) and switching losses high efficiency in a wide range of applications optimized diode for full bridge hard switch converters optimized for welding and h bridge converters square rbsoa and maximum junction temperature 175c improved reliability due to rugged hard switching performance and higher power capability 5s short circuit soa enables short circuit protection scheme positive v ce (on) temperature coefficient excellent cu rrent sharing in parallel operation lead-free, rohs compliant environmentally friendly g c e gate collector emitter insulated gate bipolar transistor with ultrafast soft recovery diode e g n-channel c e g c c e g c c irgp6660d-epbf to-247ad IRGP6660DPBF to-247ac
IRGP6660DPBF/irgp6660d-epbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 150a ? v (br)ces / t j temperature coeff. of breakdown voltage ? 0.65 ? v/c v ge = 0v, i c = 2ma (25c-175c) v ce(on) collector-to-emitter saturation voltage ? 1.65 1.95 i c = 48a, v ge = 15v, t j = 25c ? 2.10 ? i c = 48a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 1.4ma v ge(th) / t j threshold voltage te mperature coeff. ? -17 ? mv/c v ce = v ge , i c = 1.4ma (25c-175c) gfe forward transconductance ? 33 ? s v ce = 50v, i c = 48a, pw = 20s i ces collector-to-emitter leakage current ? 1.0 75 a v ge = 0v, v ce = 600v ? 630 ? v ge = 0v, v ce = 600v, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v v fm ? 1.8 2.8 v i f = 8.0a ? 1.3 ? i f = 8.0a, t j = 175c switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max units conditions q g total gate charge ? 95 ? nc i c = 48a q ge gate-to-emitter charge ? 28 ? v ge = 15v q gc gate-to-collector charge ? 35 ? v cc = 400v e on turn-on switching loss ? 0.6 ? mj i c = 48a, v cc = 400v, v ge =15v r g = 10 , l = 210h, t j = 25c energy losses include tail & diode reverse recovery ? e off turn-off switching loss ? 1.3 ? e total total switching loss ? 1.9 ? t d(on) turn-on delay time ? 60 ? ns t r rise time ? 50 ? t d(off) turn-off delay time ? 155 ? t f fall time ? 30 ? e on turn-on switching loss ? 0.78 ? mj i c = 48a, v cc = 400v, v ge =15v r g = 10 , l = 210h, t j = 175c energy losses include tail & diode reverse recovery ? e off turn-off switching loss ? 1.6 ? e total total switching loss ? 2.38 ? t d(on) turn-on delay time ? 45 ? ns t r rise time ? 55 ? t d(off) turn-off delay time ? 160 ? t f fall time ? 60 ? c ies input capacitance ? 2970 ? v ge = 0v c oes output capacitance ? 175 ? pf v cc = 30v c res reverse transfer capacitance ? 85 ? f = 1.0mhz rbsoa reverse bias safe operating area t j = 175c, i c = 192a full square v cc = 480v, vp 600v v ge = +20v to 0v scsoa short circuit safe operating area 5 ? ? s t j = 150c,v cc = 400v, vp 600v v ge = +15v to 0v erec reverse recovery energy of the diode ? 135 ? j t j = 175c t rr diode reverse recovery time ? 70 ? ns v cc = 400v, i f = 8.0a i rr peak reverse recovery current ? 22 ? a v ge = 15v, rg = 10 diode forward voltage drop ? 2.05 ? i c = 48a, v ge = 15v, t j = 150c v notes: ? v cc = 80% (v ces ), v ge = 20v, l = 210h, r g = 10 . ? r is measured at t j of approximately 90c. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? pulse width limited by max. junction temperature. ? values influenced by parasitic l and c in measurement. ? fsw =40khz, refer to figure 26.
IRGP6660DPBF/irgp6660d-epbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 25 50 75 100 125 150 175 t c (c) 0 20 40 60 80 100 i c ( a ) 1 10 100 v ce (v) 0.1 1 10 100 i c ( a ) 10sec 100sec tc = 25c tj = 175c single pulse dc 1msec fig. 2 - maximum dc collector current vs. case temperature 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) fig. 5 - reverse bias soa t j = 175c; v ge = 20v fig. 4 - forward soa t c = 25c; t j 175c; v ge = 15v 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w ) 0.1 1 10 100 f , frequency ( khz ) 20 30 40 50 60 70 80 90 100 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 175c tcase = 100c gate drive as specified power dissipation = 167w fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 3 - power dissipation vs. case temperature i square wave: v cc diode as specified
IRGP6660DPBF/irgp6660d-epbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v f (v) 0 50 100 150 200 i f ( a ) 175c 25c -40c 51 01 52 0 v ge (v) 0 1 2 3 4 5 6 7 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a fig. 9 - typ. diode forward voltage drop characteristics 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 51 01 52 0 v ge (v) 0 1 2 3 4 5 6 7 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a fig. 8 - typ. igbt output characteristics t j = 175c; tp = 20s fig. 10 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 25c fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20s
IRGP6660DPBF/irgp6660d-epbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 2 4 6 8 10 12 14 16 v ge (v) 0 50 100 150 200 i c e ( a ) t j = 25c t j = 175c 10 20 30 40 50 60 70 80 90 100 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20s 0 20 40 60 80 100 r g ( ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 15 - typ. switching time vs. i c t j = 175c; l = 210h; v ce = 400v, r g = 10 ; v ge = 15v 0 20406080100 r g ( ) 0.0 1.0 2.0 3.0 4.0 5.0 e n e r g y ( m j ) e on e off fig. 16 - typ. energy loss vs. r g t j = 175c; l = 210h; v ce = 400v, i ce = 48a; v ge = 15v 20 30 40 50 60 70 80 90 100 i c (a) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 e n e r g y ( m j ) e on e off fig. 14 - typ. energy loss vs. i c t j = 175c; l = 210h; v ce = 400v, r g = 10 ; v ge = 15v fig. 17 - typ. switching time vs. r g t j = 175c; l = 210h; v ce = 400v, i ce = 48a; v ge = 15v 51 01 52 0 v ge (v) 0 1 2 3 4 5 6 7 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a fig. 12 - typical v ce vs. v ge t j = 175c
IRGP6660DPBF/irgp6660d-epbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 0 200 400 600 800 1000 1200 di f /dt (a/s) 250 500 750 1000 1250 q r r ( n c ) 10 22 100 47 4.0a 8.0a 16a 9 10111213141516 v ge (v) 0 5 10 15 20 25 t i m e ( s ) 0 100 200 300 400 500 c u r r e n t ( a ) t sc i sc fig. 21 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c 0 5 10 15 20 25 i f (a) 50 100 150 200 250 e n e r g y ( j ) r g = 100 r g = 47 r g = 22 r g = 10 fig. 22 - typ. diode e rr vs. i f t j = 175c 0 200 400 600 800 1000 1200 di f /dt (a/s) 5 10 15 20 25 i r r ( a ) fig. 20 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 8.0a; t j = 175c fig. 23 - v ge vs. short circuit time v cc = 400v; t c = 25c 4 6 8 10 12 14 16 18 i f (a) 5 10 15 20 25 30 i r r ( a ) r g = 47 r g = 10 r g = 22 r g = 100 fig. 18 - typ. diode i rr vs. i f t j = 175c 0 20 40 60 80 100 r g ( ) 5 10 15 20 25 i r r ( a ) fig. 19 - typ. diode i rr vs. r g t j = 175c
IRGP6660DPBF/irgp6660d-epbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 102030405060708090100 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v 100 125 150 175 case temperature (c) 0 10 20 30 40 50 60 70 r e p e t i t i v e p e a k c u r r e n t ( a ) d=0.3 d=0.2 d=0.1 fig. 25 - typical gate charge vs. v ge i ce = 48a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 27 - maximum transient thermal impedance, junction-to-case (igbt) ri (c/w) i (sec) 0.007832 0.000007 0.117473 0.000170 0.181692 0.003719 0.142534 0.023371 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri c c 4 4 r 4 r 4 fig. 26 - typical gate charge vs. v ge
IRGP6660DPBF/irgp6660d-epbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 fig. 28 - maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.116586 0.000047 1.136344 0.000298 1.434449 0.002865 0.664097 0.026578 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri c c 4 4 r 4 r 4
IRGP6660DPBF/irgp6660d-epbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit fig.c.t.6 - bvces filter circuit 0 1k vcc dut l l rg 80 v dut vcc + - dc 4x dut vcc r sh l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm g force c sense 100k dut 0.0075f d1 22k e force c force e sense
IRGP6660DPBF/irgp6660d-epbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 150c using fig. ct.3 fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 -20 0 20 40 60 80 100 120 -100 0 100 200 300 400 500 600 -0.6 -0.5 -0.3 -0.2 i ce (a) v ce (v) time(s) 90% i ce 10% v ce 10% i ce eoff loss tf -20 0 20 40 60 80 100 120 -100 0 100 200 300 400 500 600 -0.6 -0.5 -0.4 -0.2 i ce (a) v ce (v) time (s) test current 90% i ce 10% v ce 10% i ce t r eon loss -25 -20 -15 -10 -5 0 5 10 15 20 -0.2 0.1 0.3 0.6 i f (a) time (s) peak i rr t rr q rr -100 0 100 200 300 400 500 600 -100 0 100 200 300 400 500 600 -5 0 5 10 ice (a) vce (v) time (s) vce ice
IRGP6660DPBF/irgp6660d-epbf 11 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 to-247ac package outline dimensions are shown in millimeters (inches) year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application.
IRGP6660DPBF/irgp6660d-epbf 12 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 to-247ad package outline dimensions are shown in millimeters (inches) to-247ad part marking information assem bly year 0 = 2000 assem bled o n w w 35, 2000 in the assem bly line "h" exam ple: this is an irg p30b120kd-e lo t co de 5657 with assembly part number date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lot code n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead-free" note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application.
IRGP6660DPBF/irgp6660d-epbf 13 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level industrial (per jedec jesd47f) ?? moisture sensitivity level to-247ac n/a rohs compliant yes to-247ad n/a ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. revision history date comments ? added i fm diode maximum forward current = 192a with the note ? on page 1. ? removed note ?? from switching losses test condition on page 2. 11/14/2014

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